Augusto Tazzoli

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0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.06.019 ⇑ Corresponding author. Tel.: +39 0461 314 441; fa E-mail address: (J. Iannacci). 1 Present address: Department of Electrical & Syste Pennsylvania, PA, USA. We propose an active mechanism to retrieve the functionality of RF-MEMS ohmic switches after stiction(More)
Several groups have demonstrated nitride-based High Electron Mobility Transistors with excellent rf output power, with a constant increase in performances. However, despite the large efforts spent in the last few years, and the progress in MTTF (Mean Time To Failure) values, reliability of GaN HEMTs (High Electron Mobility Transistors) and MMICs (Millimeter(More)
MicroElectroMechanical Systems for Radio Frequency applications (i.e. RF-MEMS) show very good performance and characteristics. However, their employment within large-scale commercial applications is still limited by issues related to the reliability of such components. In this work we present the Finite Element Method (FEM) modelling and preliminary(More)
A new silicon-controlled rectifier low voltage triggered (SCR-LVT), to be adopted as protection structure against electrostatic discharge (ESD) events, has been developed and characterized. A high holding voltage has been obtained thanks to the insertion of two parasitic bipolar transistors, achieved adding a n-buried region to a conventional SCR structure.(More)
A differential Colpitts oscillator using AlN MEMS CMR designed in 0.13 um CMOS is presented in this work. The oscillator operates at 1.16 GHz, with a total power consumption of 4.2 mW at 1 V supply. It achieves a phase noise of -143.6 dBc/Hz, 173.3 dBc/Hz at 100 kHz and 1 MHz offset frequency respectively with a figure of merit (FOM) of 228.3 dB.(More)
Neurocomputing has been regarded as an intriguing alternative to the von Neumann architecture for computing systems, especially for such applications as pattern recognition, image processing, and associative memory. However, implementations using CMOS technology have largely been considered impractical due to the required circuit complexity and(More)