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We investigate the electronic structure of terraces of single layer graphene (SLG) by scanning tunnelling microscopy (STM) on samples grown by thermal decomposition of 6H-SiC(0001) crystals in ultra-high vacuum. We focus on the perturbations of the local density of states (LDOS) in the vicinity of edges of SLG terraces. Armchair edges are found to favour(More)
In this article, a multiscale investigation of few graphene layers grown on 6H-SiC(000-1) under ultrahigh vacuum (UHV) conditions is presented. At 100-μm scale, the authors show that the UHV growth yields few layer graphene (FLG) with an average thickness given by Auger spectroscopy between 1 and 2 graphene planes. At the same scale, electron diffraction(More)
Electrical properties of Al/SrTiO<sub>3</sub> /n-Si, metal-insulator-semiconductor (MIS) structure have been carried out by employing capacitance measurements. Thin films of SrTiO<sub>3</sub> having thicknesses 50, 30 and 15 nm were grown on n-Si (N<sub>D</sub>= (2-10) times 10<sup>15</sup> cm<sup>-3</sup>) by metal organo-chemical vapor deposition (MOCVD).(More)
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