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Fabrication and characterization of resistive random access memory (ReRAM) devices using molybdenum trioxide (MoO3) as switching layer
Abstract The present study reports on the fabrication of non-volatile resistive switching (RS) memory device using MoO3 layers. Using a spray pyrolysis technique, different thicknesses of MoO3 thinExpand
Study on thickness-dependence characteristics of bismuth ferrite (BFO) for ultraviolet (UV) photodetector application
The present research work reports on the fabrication of ultraviolet (UV) photodetectors using bismuth ferrite (BiFeO 3, BFO) thin films with varying thickness. Using the spray pyrolysis technique,Expand
Investing in Agribusiness Stocks and Farmland: A Boom or Bust Analysis
INVESTING IN AGRIBUSINESS STOCKS AND FARMLAND: A BOOM OR BUST ANALYSIS by Asif Rasool, Master of Science Utah State University, 2018 Major Professor: Ryan Larsen Department: Applied Economics TheExpand
Analysis on different detection mechanisms involved in ZnO-based photodetector and photodiodes
The present study reports on the comparison between the ultraviolet (UV) light detection mechanisms in ZnO-based photodetectors and ZnO/PEDOT:PSS hybrid photodiodes. Using spray pyrolysis method, ZnOExpand
Realization of In:ZnO/PEDOT:PSS based multifunctional device for ultraviolet (UV) light detection and resistive switching memory applications
The present research reports on a hybrid multifunctional device for UV light detection and non-volatile resistive switching memory based on n-In:ZnO/poly 3,4-ethylene dioxythiophene:polystyreneExpand
Ferroelectric polarization induced memristive behavior in bismuth ferrite (BiFeO3) based memory devices
Abstract Bismuth ferrite (BiFeO3, BFO) thin films of various thickness were deposited using spray pyrolysis technique at 673 K. The structural studies of the prepared BFO thin films show aExpand