Ashok M. Mahajan

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—The paper presents the detailed analysis of the interconnect capacitance, crosstalk time and peak crosstalk voltage. The dependency of the couple capacitance and fringe capacitance on the interconnect layer dimensions affects significantly to the interconnect ca-pacitance. The peak crosstalk time obtained to be 13 femtoseconds for 9.6 femtoseconds of(More)
The high dielectric constant (high-k) thin film of Al 2 O 3 was deposited by using Plasma enhanced atomic layer deposition (PE-ALD) technique. The electron beam evaporation system was used to deposit the Pt-Ti metal to fabricate the Pt-Ti/Al 2 O 3 /Si MOS capacitors. Thickness measurement of Al 2 O 3 gate dielectric was carried out with variable angle(More)
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