Arvind Mallik

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In this paper, an analytical model for threshold voltage of dual material gate (DMG) MOS transistors is presented. For such devices, the depletion regions due to source/drain junctions occupy a large portion of the channel, and hence are very important for accurate modeling. The proposed threshold voltage model is based on a realistic physically-based model(More)
In this paper we systematically investigate the effects of the varying tilt angle of the halo implants on the different device performance parameters of 100 nm lateral asymmetric channel (LAC) MOSFETs. The tilt angle is varied from 5deg to 60deg with twist angle 0deg. Substantial reduction of sub-threshold swing is found for large tilt angles as compared to(More)
In addition to its attractiveness for ultra-low power applications, analog circuits based on the subthreshold operation of the devices can have significantly higher gain as compared to their superthreshold counterparts. In this paper, we systematically study the analog performances in terms of g<sub>m</sub>, g<sub>m</sub>/I<sub>d </sub> etc of conventional(More)
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