Artem Rogachev

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This paper presents the <i>first</i> parameterized, SPICE-compatible compact model of a Graphene Nano-Ribbon Field-Effect Transistor (GNRFET) with doped reservoirs that also supports process variation. The current and charge models closely match numerical TCAD simulations. In addition, process variation in transistor dimension, edge roughness, and doping(More)
With technology scaling, the variability of device parameters continues to increase. This impacts both the performance and the temperature profile of the die turning them into a statistical distribution. To the best of our knowledge, no one has considered the impact of the statistical thermal profile during statistical analysis of the propagation delay. We(More)
2-(3(4)-Hydroxy-4(3)-methoxyphenyl)-4,7-dimethyl-3,4,4a,5,8,8a-hexahydro-2H-chromene-4,8-diols were found recently to possess high analgesic activity and low acute toxicity. Stereoisomers of these compounds with high optical purity were synthesized from (+)- and (−)-α-pinenes for the first time in this work. The structure of (4S)-4b isomer was confirmed by(More)
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