Arpan Deyasi

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Negative resistivity of Si and Si<sub>0.9</sub>Ge<sub>0.1</sub> DDR IMPATT diode are numerically computed using double iterative method and modified Runge-Kutta method and results are compared for identical input parameters. Simulation is based on simultaneous solution of Poisson's equation, continuity equation and carrier diffusion equation in addition(More)
Eigenstates and intersubband transition energies of a T-shaped quantum wire embedded in square quantum wire are numerically computed by solving time-independent Schro&#x0308;dinger equation using finite difference technique. Dimensions of arm well and stem wells and material composition of shell layer is varied to observe the change in transition energies.(More)
Intersubband transition energies of a semiconductor heterostructure quantum ring with cylindrical geometry are computed considering three lowest eigenstates. Band nonparabolicity is considered to observe the change in transition energy compared with parabolic band, as well as material composition of the heterostructure is varied taking AlxGa1-xAs as an(More)
-Transmission coefficient, eigen states and tunneling current density of a potentially symmetric quantum double barrier structure has been numerically computed using transfer matrix technique for qualitative analysis of resonant tunneling probability when realistic band structure of higher band gap material is taken into account. GaAs/AlxGa1-xAs material(More)
Novel band-reject filter is proposed using multilayer Bragg mirror structure by computing reflection coefficient at 1550 nm wavelength for optical communication. Dimension of different layers and material composition are modified to study the effect on rejection bandwidth, and no. of layers is also varied for analyzing passband characteristics.(More)
Effect of tunneling resistances and tunneling capacitances on the current-voltage characteristics of single electron transistor are analytically computed assuming source and drain ends are connected by quantum dot. Steady state master equation is solved by considering tunneling mechanism a stochastic process, and free energy changes are calculated as a(More)
-Electromagnetic wave propagation inside one-dimensional photonic crystal fiber is numerically characterized by computing V-parameter, cladding index and effective mode profiles. Dependence on these parameters on geometrical structure of the fiber reflects the design tolerance, and corresponding modal characteristics. Air-hole spacing and periodicity are(More)
Conductance, susceptance, reactance, quality factor and noise factor of Si<sub>09</sub>Ge<sub>01</sub> IMPATT diode are numerically computed using double iterative method and modified Runge-Kutta method when device is operated at millimeterwave frequency region. Poisson's equation, carrier diffusion equation and continuity equation are simultaneously solved(More)
Complete photonic bandgap is formed in two-dimensional photonic crystal with triangular geometry under TE mode of propagation. Maxwell's equations are solved using plane wave expansion method and eigen equations for TE and TM modes are obtained using appropriate boundary conditions. Structure is realized by inserting cylindrical rods in triangular lattice.(More)
Photonic bandpass filter is designed at 1.55 &#x03BC;m using double negative refractive index material with air interface for use in optical communication system. Paired nanorod is considered as the DNG material for simulation, and wave propagation thorough the structure is considered along the direction of refractive index variation. Effect of oblique(More)