Arnulf Leuther

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In this paper, we are presenting two terahertz monolithic integrated circuits (TMICs) for use in next-generation radar and spectroscopy systems operating in the WR-1.5 waveguide band (500 - 750 GHz). Both amplifier circuits have been realized using a 35 nm InAlAs/InGaAs based metamorphic high electron mobility transistor (mHEMT) technology in combination(More)
In this paper, we present a four-stage submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier for use in next generation radar and communication systems operating in the WR-2.2 waveguide band (325 - 500 GHz). The low-noise amplifier circuit (LNA) has been realized using a 35 nm InAlAs/InGaAs based metamorphic high electron mobility transistor(More)
We present the development of two 220 GHz low-noise amplifier (LNA) MMIC's for use in high-resolution active and passive millimeter-wave imaging systems. The amplifier circuits have been realized using a 0.1 /spl mu/m InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (MHEMT) technology in combination with coplanar circuit(More)
A compact broadband balanced frequency doubler with a novel integrated balanced FET is presented. The MMIC operates at second harmonic output frequencies from 128 to 220GHz with a maximum output power of 1.8dBm at 154GHz and an input power of 9dBm. Due to the balanced topology the MMIC is able to provide second harmonic output power over the entire G-band(More)
A broadband high-gain amplifier MMIC (monolithic microwave integrated circuit) operating over the full D-band from 110-170 GHz is presented. A meandered coplanar waveguide (CPW) design is used to shrink the size of the circuit block to 0.9 × 0.7 mm while accommodating four amplification stages. The gain of the amplifier exceeds 25 dB nearly over the(More)
A millimeter-wave monolithic integrated circuit (MMIC) consisting of a W-band (75 - 100 GHz) single-pole-five-throw (SP5T) switch and multiple internal active and passive loads for radiometer calibration was designed and manufactured in a low noise 50 nm GaAs mHEMT technology. This highly compact and integrated front-end device for radiometer systems is(More)
Two single-chip frequency multiplier chains targeting 118 and 183 GHz output frequencies are presented. The chips are fabricated in a 0.1 ¿m GaAs metamorphic high electron-mobility transistor process. The D-band frequency doubler chain covers 110 to 130 GHz with peak output power of 5 dBm. The chip requires 2 dBm input power and consumes only 65 mW of dc(More)
This paper presents the design and performance of various millimeter-wave FET switches realized in a metamorphic HEMT technology. The single-pole multi-throw switch configurations are targeting wireless communication frontends and imaging radiometers at 60, 94 and 120 GHz. In SPDT switches, state-of-the-art insertion loss of 1.4 and 1.8 dB is achieved at 60(More)
An active frequency-doubler MMIC achieving an output frequency of 300GHz and its monolithic integration with a 300GHz resistive mixer is presented. The frequency-doubler provides a broadband source with an average output power of −9.5 dBm and better than 10 % conversion efficiency in the frequency range from 250 to 310 GHz. At 300 GHz, a(More)
This paper presents the design and characterization of single-chip 220-GHz heterodyne receiver (RX) and transmitter (TX) monolithic microwave integrated circuits (MMICs) with integrated antennas fabricated in 0.1- μm GaAs metamorphic high electron-mobility transistor technology. The MMIC receiver consists of a modified square-slot antenna, a(More)