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Two single-chip frequency multiplier chains targeting 118 and 183 GHz output frequencies are presented. The chips are fabricated in a 0.1 ¿m GaAs metamorphic high electron-mobility transistor process. The D-band frequency doubler chain covers 110 to 130 GHz with peak output power of 5 dBm. The chip requires 2 dBm input power and consumes only 65 mW of dc(More)
An active frequency-doubler MMIC achieving an output frequency of 300GHz and its monolithic integration with a 300GHz resistive mixer is presented. The frequency-doubler provides a broadband source with an average output power of −9.5 dBm and better than 10 % conversion efficiency in the frequency range from 250 to 310 GHz. At 300 GHz, a(More)
In this paper, we present the development of a W-band power amplifier (PA) circuit and a G-band low-noise amplifier (LNA) MMIC for use in a high-resolution radar system operating at 210 GHz. The power amplifier circuit has been realized using a 0.1 um InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (MHEMT) technology in(More)
A compact broadband balanced frequency doubler with a novel integrated balanced FET is presented. The MMIC operates at second harmonic output frequencies from 128 to 220GHz with a maximum output power of 1.8dBm at 154GHz and an input power of 9dBm. Due to the balanced topology the MMIC is able to provide second harmonic output power over the entire G-band(More)
A millimeter-wave monolithic integrated circuit (MMIC) consisting of a W-band (75 - 100 GHz) single-pole-five-throw (SP5T) switch and multiple internal active and passive loads for radiometer calibration was designed and manufactured in a low noise 50 nm GaAs mHEMT technology. This highly compact and integrated front-end device for radiometer systems is(More)
— Advanced circuits based on metamorphic HEMT (MHEMT) technologies on 4 " GaAs substrates for both millimeter-wave, and mixed-signal applications are presented. Extrinsic cutoff frequencies of f t = 293 GHz and f max = 337 GHz were achieved for a 70 nm gate length metamorphic HEMT technology. The MMIC process obtains high yield on transistor and circuit(More)
G-band low-noise amplifier (LNA) modules have been successfully developed for use in high-resolution radiometric imaging applications. The WR-5 waveguide modules contain a four-stage 220 GHz cascode LNA MMIC and two microstrip-to-waveguide transitions which were realized on 50 mum thick quartz substrates. The monolithic amplifier circuits were fabricated(More)