Arnaud Tournier

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Deep Trench technology for CMOS image sensor was successfully developed and industrialized for bestin-class 1.4μm pixel Front-Side Illumination (FSI) technology. The performance achievements on QE both on and off-axis without any degradation of other pixel parameters show the need of a perfect pixel isolation for better color fidelity. Comparison with other(More)
This paper describes the implementation of a single-transistor (1T) charge-modulation pixel structure. It consists of a NMOS transistor with specific channel implant in a floating P-well. This same transistor can be operated for photosensing, charge storage, integration, readout and reset. A 2.2 mum pixel pitch array has been designed and fabricated in a(More)
We present our studies on small-sized pixel structures for high-resolution CMOS image sensors. To minimize the number of pixel components, single-transistor pixel and 2T pixel architecture were proposed. To deal with crosstalk between pixels, MOS capacitor deep trench isolation (CDTI) was integrated. CDTI-integrated pixel allows better achievements in dark(More)
We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model(More)
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