—The development of high-performance optical receivers has been a primary driving force for research on III-V compound avalanche photodiodes (APDs). The evolution of fiber optic systems toward higher bit rates has pushed APD performance toward higher bandwidths, lower noise, and higher gain-bandwidth products. Utilizing thin multiplication regions has… (More)
Morphological integration has the potential to link morphological variation within populations with morphological evolution among species. This study begins to investigate this link by comparing integration among shoulder girdle elements (e.g. scapular blade, glenoid, coracoid, etc.) during the origin and evolution of therian mammals, and within modern bat,… (More)
Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-temperature electroluminescence… (More)
the captions did not match the correct figures. The following are the figures with the correct captions. Fig. 10. Photocurrent, dark current, and gain curves for an Al In As/ In Ga As SACM APD. Fig. 11. Measured dark current and quadratic fit versus mesa diameter for Al In As/In Ga As SACM APDs.
The wealth of information available on seemingly every topic creates a considerable challenge both for information providers trying to rise above the noise and discerning individuals trying to find relevant, trustworthy information. We approach this information problem by investigating how passive versus interactive information interventions can impact the… (More)
—GaP avalanche photodiodes, with thin device layers have been processed, utilizing both p-in and recessed window p-in structures, as well as a Schottky structure. The results showed low dark currents, good quantum efficiency (QE), and high gains up to 10 3 , with good uniformity across the wafer. The peak QE at 440 nm indicated 0-valley absorption, rather… (More)