Anurag Chaudhry

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This paper examines the performance degradation of a MOS device fabricated on silicon-on-insulator (SOI) due to the undesirable short-channel effects (SCE) as the channel length is scaled to meet the increasing demand for high-speed high-performing ULSI applications. The review assesses recent proposals to circumvent the SCE in SOI MOSFETs and a short(More)
Silicon-on-insulator (SOI) has been the forerunner of the CMOS technology in the last decade offering superior CMOS devices with higher speed, higher density, excellent radiation hardness and reduced second order effects for submicron VLSI applications. Recent experimental studies have invigorated interest in fully depleted (FD) SOI devices because of their(More)
A two–dimensional (2-D) analytical model for the surface potential variation along the channel in fully depleted dual-material gate silicon-on-insulator MOSFETs is developed to investigate the short-channel effects (SCEs). Our model includes the effects of the source/drain and body doping concentrations, the lengths of the gate metals and their work(More)
Laterally oriented single-crystal silicon nanowires are epitaxially grown between highly doped vertically oriented silicon electrodes in the form of nanobridges. Resistance values extracted from the current-voltage measurements for a large number of nanobridges with varying lengths and diameters are used to propose a model which highlights the relative(More)
This paper considers multihop wireless networks that are used for multicast traffic i.e., networks in which subsets of users are interested in identical information such as a video clipping. We calculate an upper bound on the achievable throughput per multicast flow as a function of the number of sources, number of destinations per source, number of(More)
The utility problem in speedup learning describes a common behavior of machine learning methods: the eventual degradation of performance due to increasing amounts of learned knowledge. The shape of the learning curve (cost of using a learning method vs. number of training examples) over several domains suggests a parameterized model relating performance to(More)
Research interest in InN has intensified in recent years because of its unique material properties and promising applications in electronic and photonic devices. Measurements on InN nanowires presented by Chang et al., [J. Electron. Mater. 35, 738 (2006)] showed an anomalous resistance behavior in InN nanowires with diameters less than 90 nm. We examine(More)
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