Anupam Madhukar

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Precise and controlled manipulation of individual gold nanoparticles (deposited on a Si/SiO surface) in liquid environments using the tip of a scanning force microscope is reported for the "rst time. Experiments were performed in deionized water and in ethanol as a prototype for an organic solvent. Analysis of the amplitude signal of the cantilever before(More)
Experimental results that provide new insights into nanomanipulation phenomena are presented. Reliable and accurate positioning of colloidal nanoparticles on a surface is achieved by pushing them with the tip of an atomic force microscope under control of software that compensates for instrument errors. Mechanical pushing operations can be monitored in real(More)
Dynamic force microscopy (DFM) in combination with special-purpose probe control software is used as a manipulation tool for the precise positioning of single gold nanoparticles on a mica substrate covered with a poly-L-lysine film. Experimental results are presented that show how to construct arbitrary patterns of nanoparticles. The dynamic state of the(More)
Hydroxylamine-seeding of colloidal gold particles has been used to fabricate gold nanostructures on a SiO2 substrate. Gold nanoparticles (15 nm diameter) were randomly deposited on a SiO2 surface that had been modified with aminopropyltrimethoxysilane (APTS). The nanoparticles were then manipulated using a scanning force microscope (SFM) tip to produce 1-D(More)
Quantitative information on the dynamics of multiple molecular processes in individual live cells under controlled stress is central to the understanding of the cell behavior of interest and the establishment of reliable models. Here, the dynamics of the apoptosis regulator intracellular Ca(2+), apoptosis effector caspase-3/7, and morphological changes, as(More)
Parallel molecular dynamics simulations are performed to determine atomic-level stresses in Si͑111͒͞ Si 3 N 4 ͑0001͒ and Si͑111͒͞a-Si 3 N 4 nanopixels. Compared to the crystalline case, the stresses in amorphous Si 3 N 4 are highly inhomogeneous in the plane of the interface. In silicon below the interface, for a 25 nm square mesa stress domains with(More)