Antonios Travlos

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Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include(More)
Low-area density ZnO nanowire arrays, growing perpendicularly to the substrate, are synthesized with high-pressure pulsed laser deposition. The introduction of a ZnO buffer layer enables us to fabricate individual nanowires several micrometres apart (area density<0.1 nanowire microm(-2)), suppressing any shadowing effect by neighbouring nanowires during(More)
Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing the Sn:In2O3 nanowires to H2S at 300 °C but also cubic bixbyite In2O3, which remains dominant, and the emergence of rhombohedral(More)
Purpose of this study is to explore those factors which affect the health of students in postadolescent age, focusing on smoking and alcohol use, especially in regard to ways of predicting adoption of this behavior and its frequency to detect future users of tobacco and alcohol use but also high-risk groups, i.e. those people who are led to abuses. On the(More)
Fe(50)Pt(50) nanoparticles were deposited on thermally oxidized Si substrates by electron-beam co-evaporation of Fe and Pt, at substrate temperatures T(s) between 300 and 700 degrees C. The co-deposition led to the formation of drop-like, coalesced nanoparticles, chain-like structures or continuous films, the morphology being dependent on T(s) or the(More)
MgZnO/ZnO quantum wells on top of ZnO nanowires were grown by pulsed laser deposition. Ensembles of spatially fluctuating and narrow cathodoluminescence peaks with single widths down to 1 meV were found at the spectral position of the quantum well emission at 4 K. In addition, the number of these narrow QW peaks increases with increasing excitation power in(More)
The formation of thin alumina films on a silicon substrate by anodization in a mild acid, specifically in 1% wt citric acid aqueous solution, is investigated by transmission electron microscopy (TEM). We present a comparative study between two cases of starting material: pure aluminum and an alloy of aluminum with 1% silicon. In both cases the thickness of(More)
We compare CoPt and FePt nanoparticles grown under identical conditions on oxidized Si substrates by electron beam co-evaporation. Growth was performed under high vacuum conditions at substrate temperatures of 1023 K and was immediately followed by an annealing step. This process forms CoPt and FePt nanoparticles with mean diameters between ∼17 and ∼22 nm.(More)
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