Antonio Saavedra

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We have investigated the electrical activation of implanted boron in silicon-on-insulator (SOI) material using Hall effect, four-point probe, and secondary ion mass spectrometry. Boron was implanted at energies ranging from 1 keV to 6.5 keV with a dose of 331014 cm−2 into bonded SOI wafers with surface silicon thickness ranging from 300 Å to 1600 Å. In one(More)
The reaction kinetics of {3 1 1} defect dissolution in SIMOX, SOITEC and bulk silicon materials have been investigated. The effects of implant energy and surface silicon thickness on the activation energy for {3 1 1} dissolution have been measured using quantitative TEM (QTEM). SOI wafers having surface silicon thickness of 750 and 1450 Å were implanted(More)
End of range ~EOR! defects are the most commonly observed defects in ultrashallow junction devices. They nucleate at the amorphous-crystalline interface upon annealing after amorphization due to ion implantation. EOR defects range from small interstitial clusters of a few atoms to $311% defects and dislocation loops. They are extrinsic defects and evolve(More)
This paper presents a custom hardware architecture for fast, low-power super-resolution in infrared images. The architecture performs multiple-frame registration using the Lukas-Kanade optical flow algorithm with Gaussian pyramids, and uses a custom-designed reconstruction algorithm that generates a high-resolution image from multiple consecutive video(More)
Department of Materials Science and Engineering, and Department of Electrical and Computer Engineering, SWAMP Center, University of Florida, Gainesville, Florida 32611, USA Department of Electrical and Computer Engineering, SWAMP Center, University of Florida, Gainesville, Florida 32611, USA IBM Semiconductor Research and Development Center, Research(More)
As device dimensions continue to be scaled, incorporation of silicon-on-insulator ~SOI! as mainstream complementary metal–oxide–semiconductor technology also increases. This experiment set out to further investigate the effect of the surface Si/buried oxide ~BOX! interface on the formation and dissolution of extended defects in SOI. UNIBOND® wafers were(More)
Silicon-on-insulator ~SOI! has proven to be a viable alternative to traditional bulk silicon for fabrication of complementary metal–oxide–semiconductor devices. However, a number of unusual phenomena with regards to diffusion and segregation of dopants in SOI have yet to be explained. In the present study, SOITEC wafers were thinned to 700 and 1600 Å using(More)
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