Antonin Bougerol

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This paper presents a methodology for analyzing the behavior of nanometer technologies regarding "multiple event transients" (MET) caused by nuclear reaction induced by atmospheric neutrons. For the first time, currents collected by several sensitive areas of an ASIC cell resulting from a nuclear reaction are addressed by simulation. Libraries of several(More)
This paper presents a new Monte-Carlo methodology to investigate the transient effect occurrence in complementary metal oxide semiconductor (CMOS) logic circuits: TMC DASIE (transient Monte-Carlo detailed analysis of secondary ion effects). The production and effects of single-event transients inside CMOS combinational logic gates are examined. First(More)
In this work, using heavy ion and pulsed laser tests on a 110 nm 256 Mbit SDRAM, different SEFI types and other logic-related radiation effects are studied and explained. Effects seen using heavy ions were reproduced and localized on the die with the laser. Among the effects, Fuse-Latch Upsets were found to be responsible of typical addressing errors and(More)
This work shows the capabilities of Monte Carlo simulation based on nuclear database to identify the influence of device parameters and process on Single Cell Upset and Multicell Upset rates in integrated bulk and SOI CMOS technologies up to 65 nm. The method is applicable both to SRAM and logic cells, and is valid for high energy and thermal neutrons.
Static raw soft-error rates (SER) of COTS microprocessors are classically obtained with particle accelerators, but they are far larger than real application failure rates that depend on the dynamic application behavior and on the cache protection mechanisms. In this paper, we propose a new methodology to evaluate the real cache sensitivity for a given(More)
Thanks to laser and accelerator tests, we investigated the influence of test patterns regarding both SEU and SEFI radiation sensitivities for several DRAM technology nodes, from 210 to 90 nm. Regarding SEUs, we demonstrated that preponderant physical mechanisms vary with technology nodes, so patterns revealing worst-case SEU sensitivity vary as well.(More)
This paper describes a novel patented radiation mitigation technique for DRAM cell memories. Because of their non-symmetrical structure, only one state is sensitive to radiations. This particular property is used to detect and correct upsets. Several fault-tolerant architectures are proposed, which are able to detect and correct all SEU/ MBU in a word,(More)
In this paper, we explain the validation of the Cache Analyzer prediction technique thanks to accelerated test experiments. The technique, described in one of our previous works and targeted towards end-user exploitation, focuses on the analysis of cache memory transactions. This paper presents the experimental setup, including the fault detection system(More)
This paper describes several methodologies based on a pulsed laser beam to reveal the architecture of a high integrated SDRAM, and the different classes of Single Event Effects that can occur due to cosmic radiations. At cell level, laser is used to reveal an important technological parameter: the lithography process. At memory array level, laser is a(More)