We present the results of single event effects (SEE) testing and investigating the effects of space radiation on electronics. This paper is a summary of test results.
Single-event effect (SEE) and total ionizing dose (TID) test results are presented for various hardened and commercial power metal-oxide-semiconductor field effect transistors (MOSFETs), including vertical planar, trench, superjunction, and lateral process designs.
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
We present results on heavy-ion and proton irradiations for commercial SiGe BiCMOS differential amplifiers: LTC6400-20 from Linear Technology and THS4304 from Texas Instruments. We found that the devices are susceptible to heavy-ion-induced SETs, with relatively low LET thresholds (LETth). The LTC6400 exhibits a LETth < 7.4 MeV•cm2/mg for… (More)
A number of electronic devices have been tested for sensitivity to single event effects for space applications by Ball Aerospace & Technologies Corp. and collaborators. Test conditions and results are presented for each device.
Robotic rehabilitation has proven to be cost-effective in accelerating the rehabilitation process by eliminating the constant need for supervision by a therapist. This work aimed to design and develop a novel three-dimensional (3D) printable non-assembly five-fingered robotic hand exoskeleton for rehabilitation. A single degree-of-freedom (DOF) linkage was… (More)
We present results on the effects on ELDRS at dose rates of 10, 5, 1, and 0.5 mrad(Si)/s for a variety of radiation hardened and commercial devices. We observed low dose rate enhancement below 10 mrad(Si)/s in several different parts. The magnitudes of the dose rate effects vary. The TL750L, a commercial voltage regulator, showed dose rate dependence in the… (More)