Anthony Kaleta

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This paper utilizes the results of a study that has been previously published [1] by the authors of the underlying mechanisms for reverse leakage current in GaN High Electron Mobility Transistors (HEMTs). This analysis concluded that managing electric field in gate Schottky on GaN HEMTs is extremely critical for enhancing device reverse leakage and(More)
CdTe nanowires with the average diameter of only 40 nm coated with (Cd,Mg)Te shells are grown using Au-catalyzed vapor-liquid-solid growth mechanism in a system for molecular beam epitaxy. High optical quality of individual nanowires is revealed by means of low temperature cathodoluminescence and micro-luminescence. It is found that, the optical emission(More)
MACOM Technology Solutions has a continuing joint development efforts sponsored by the Department of Energy with MIT main campus and MIT Lincoln Laboratory to develop GaN on silicon three terminal high voltage/high current switching devices. The initial developmental goals were for a three terminal structure that has a reverse breakdown characteristic of(More)
This paper utilizes the results of a study that has been previously published [1] by the authors of the underlying mechanisms for reverse leakage current in GaN High Electron Mobility Transistors (HEMTs). This analysis concluded that managing electric field in gate Schottky on GaN HEMTs is extremely critical for enhancing device reverse leakage and(More)
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