Anshul A. Vyas

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Carbon nanotubes (CNTs) and carbon nanofibers (CNFs) are potential materials for high-performance electronic devices and circuits due to their light weight and excellent electrical properties such as high current capacity and tolerance to electromigration. In addition, at high frequencies, these materials exhibit transport behavior which holds special(More)
To realize nanocarbons in general and carbon nanotube (CNT) in particular as on-chip interconnect materials, the contact resistance stemming from the metal–CNT interface must be well understood and minimized. Understanding the complex mechanisms at the interface can lead to effective contact resistance reduction. In this study, we compile existing published(More)
Ion-beam-induced deposition (IBID) and electron-beam-induced deposition (EBID) with tungsten (W) are evaluated for engineering electrical contacts with carbon nanofibers (CNFs). While a different tungsten-containing precursor gas is utilized for each technique, the resulting tungsten deposits result in significant contact resistance reduction. The(More)
Advances in semiconductor technology due to the aggressive downward scaling of on-chip feature sizes have led to rapid rises in the resistivity and current density of interconnect conductors. As a result, current interconnect materials, Cu and W, are subject to performance and reliability constraints approaching or exceeding their physical limits.(More)
Carbon nanotubes (CNTs) and graphene are potential candidates for future interconnect materials. CNTs are promising on-chip via interconnect materials due to their readily formed vertical structures, their current-carrying capacity, which is much larger than existing on-chip interconnect materials such as copper and tungsten, and their demonstrated ability(More)
Carbon nanotubes (CNTs) and carbon nanofibers (CNFs) are potential materials for the most advanced silicon devices and circuits due to their excellent electrical properties such as high current capacity and tolerance to electromigration. In addition, at high frequencies, these materials exhibit transport behavior which holds promise for applications as(More)
To realize carbon nanotube (CNT) as on-chip interconnect materials, the contact resistance stemming from the metal-CNT interface must be well understood and minimized. In this study, we compile existing published results and understanding for two metal-CNT contact geometries, sidewall or side contact and end contact, and address their key performance(More)
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