Annelies Falepin

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We have studied n+ Si:C stressor formation by C or C<inf>7</inf>H<inf>7</inf> ion implantation on blanket wafers for different integration schemes (so-called post Source/Drain versus post Source/Drain Extension integration). Using sheet resistance and High Resolution X-Ray Diffraction (HR-XRD) fitting parameters as the main metrics, we studied the influence(More)
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