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Journals and Conferences
We study the design of different 6T and DICE SRAM blocks based on a commercial 65 nm CMOS technology and discuss the experimental results for X-ray, proton and heavy ion irradiation campaigns. The… (More)
The temperature dependence of single-event upset multiplicity in 65 nm CMOS SRAM was investigated in this paper. Experimental results show significant increase of upset multiplicity over a… (More)
We propose a new semi-empirical method for estimation of Single Event Upset (SEU) cross section for SRAM Dual Interlocked Cells (DICE) with known distance between neighboring sensitive volumes. The… (More)
Several cases differences SEL sensitivity in IC's with same crystals marking are presented and discussed. The crystals are compared visually and identical crystal markings confirmed.
New experimental results using both ion and laser facilities are presented to analyse four multiple cell upset (MCU) mechanisms in SRAMs. Equations describing basic MCU mechanisms were provided.
In this work the analysis of possible approaches to SEU-hardness testing for SRAM with error correction were conducted. Efficiency of the aproach proposed by Aeroflex was evaluated, and the results… (More)
Single Event Upsets are a growing problem in memories. Therefore, it is important to properly characterize them in order to have a clear idea of how they behave in different applications and… (More)
The paper presents experimental results of FRAM single event effects (SEE) tests. The dependence of FRAM susceptibility to the Single Event Functional Interrupt (SEFI) and Single Event Hard Error… (More)