Anil Kumar Gundu

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This paper reports a modified latch based Sense Amplifier (SA) and then provides a qualitative statistical comparison of its yield based on offset voltage and sensing delay in 28nm CMOS technology. A thorough comparative statistical analysis with regards to conventional latch based SA is also reported with respect to random do pant fluctuation. Influence of(More)
Random variations play a critical role in determining SRAM yield, by affecting both the bitcell and the read Sense Amplifiers (SA). A low-offset sense amplifier capable of static random access memory (SRAM) applications has been presented in this work. Simulated results show that the proposed sense amplifier has very low offset of 31.284 mV compared to the(More)
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