Anil Ahlawat

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Future efficient wireless communication systems require, for high quality performance a Broadband Amplifier in the frequency range under consideration. This could be plugged into the measuring path so that it enables the system to perceive even the weakest signals. For this a new Scattering-parameter model for the microwave analysis of a PHEMT(More)
For any software, its evaluation is significant for managing, controlling so that we can improve a software development process. For such evaluation of software, many factors have been recognized in literature surveys. Quality is one of most important factor which cannot be measured easily, because of its dependency on various other factors. Usability is(More)
Breast cancer is the leading cause of death among the women worldwide. Early detection and proper treatment may reduce the mortality rate and ultrasound imaging is used as a complimentary with the mammography to detect and diagnose the tumor. During the inspection of thick and dense breast tissue ultrasound imaging gives better tissue characterization than(More)
In this paper, a simple non-linear analytical charge control model for the DC and microwave characteristics of AlGaN/GaN MODFET is presented. The effect of parasitic resistances s R and d R is also incorporated. The model has also been extended to obtain the expressions for transconductance, drain conductance and cut-off frequency of the device. The model(More)
Copyright and Reprint Permission: Abstracting is permitted with credit to the source. Libraries are permitted to photocopy beyond the limit of U.S. copyright law for private use of patrons those articles in this volume that carry a code at the bottom of the first page, provided the per-copy fee indicated in the code is paid through Copyright Clearance(More)
In this paper, a variant of Backpropagation algorithm is proposed for feed-forward neural networks learning. The proposed algorithm improve the backpropagation training in terms of quick convergence of the solution depending on the slope of the error graph and increase the speed of convergence of the system. Simulations are conducted to compare and evaluate(More)
An improved analytical two dimensional (2-D) model for AlGaN/GaN modulation doped field effect transistor (MODFET) has been developed. The model is based on the solution of 2-D Poisson’s equation. The model includes the spontaneous and piezoelectric polarization effects. The effects of field dependent mobility, velocity saturation and parasitic resistances(More)
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