Ani Khachatrian

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We show the single-event effect characteristics of a production-level embedded resistive memory. The resistive memory under investigation is a reduction-oxidation random access memory embedded inside a microcontroller. The memory structure consists of Ir top electrode, Ta<sub>2</sub>O<sub>5-&#x03B4;</sub>/TaO<sub>x</sub> metal-oxide, and TaN bottom(More)
The synergistic effect between Total Ionizing Dose (TID) and Analog Single Event Transient (ASET) in LM124 operational amplifiers (opamps) from three different manufacturers is investigated. This effect is clearly identified on only two manufacturers by three, highlighting manufacturer dependent. In fact, significant variations were observed on both the TID(More)
Carrier injection by single-photon absorption using ultraviolet optical pulses is used to investigate single-event transients in pristine and proton-irradiated AlGaN/GaN HEMTs. High-precision spatial mapping of defects and traps in AlGaN/GaN HEMT devices identify regions of enhanced SET signals, or &#x201C;hot spots&#x201D; that are ascribed to the presence(More)
Nonlinear beam propagation software is used to calculate quantitatively the two-photon absorption (TPA)-induced charge-density profiles generated in silicon by focused femtosecond laser pulses under conditions that are experimentally relevant for single-event effects studies. The described approach permits simulation and prediction of the impact of various(More)
Circuit parameters and configuration are very important when studying the synergistic effects total dose/SET. We explore a method combining dynamic parameter measurement and spectrum analysis which lead to a better understanding of this complex phenomenon. In this paper symbolic circuit analysis is used to obtain the relationship between input, output and(More)
Gallium arsenide material has been deposited via metal organic chemical vapor deposition (MOCVD) at growth rates varying between 14 &#x03BC;m/hr and 56 &#x03BC;m/hr. Photovoltaic device results indicate a 6-7% relative decrease in efficiency between 14 and 56 &#x03BC;m/hr GaAs solar cells, due to a reduction in short-circuit current and open-circuit(More)
The propagation of Analog Single Event Transients (ASETs) to multiple outputs of Bipolar Junction Transistor (BJTs) Integrated Circuits (ICs) is reported for the first time. The results demonstrate that ASETs can appear at several outputs of a BJT amplifier or comparator as a result of a single ion or single laser pulse strike at a single physical location(More)
The growing maturity of DNA-based architectures has raised considerable interest in applying them to create photoactive light harvesting and sensing devices. Toward optimizing efficiency in such structures, resonant energy transfer was systematically examined in a series of dye-labeled DNA duplexes where donor-acceptor separation was incrementally changed(More)
An emerging trend with semiconductor quantum dots (QDs) is their use as scaffolds to assemble multiple energy transfer pathways. Examples to date have combined various competitive and sequential Förster resonance energy transfer (FRET) pathways between QDs and fluorescent dyes, luminescent lanthanide complexes, and bioluminescent proteins. Here, we show(More)
The single-event transient (SET) response of a SiGe-based, L-band low-noise amplifier (LNA) is investigated, with a focus on providing recommendations for radiation event simulation techniques. Pulsed-laser, two-photon absorption experiments show that the SET sensitivity of the SiGe LNA is highly dependent on operating conditions and strike location. Time(More)