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A practical and accurate parameter extraction method is presented for the Fourier-based-solution physics-based insulated gate bipolar transistor (IGBT) and power diode models. The goal is to obtain a model accurate enough to allow switching loss prediction under a variety of operating conditions. In the first step of the extraction procedure, only one… (More)

In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink. Compared with the traditional finite-difference thermal model and equivalent RC thermal network, the new thermal model can provide high… (More)

- Tanya K. Gachovska, Jerry L. Hudgins, +4 authors Tanya K. Gachovska
- 2017

This paper presents a physics-based model of a silicon carbide bipolar junction transistor and verification of its validity through experimental testing. The Fourier series solution is used to solve the ambipolar diffusion equation in the transistor collector region. The model is realized using MATLAB and Simulink. The experimental results of static… (More)

- Ian R. Swan, Angus T. Bryant, Phil Mawby
- 2008 IEEE Industry Applications Society Annual…
- 2008

This paper describes the development and implementation of an analytical thermal model for fast and accurate thermal simulations of power device modules. A Fourier-based solution is used to solve the heat equation in two dimensions. The solution can describe the variation of temperature through the structure versus time. The thermal model is extremely fast… (More)

- Angus T. Bryant, K. K. Vadlapati, John Starkey, A. P. Goldney, S. Y. Kandilidis, D. A. Hinchley
- Proceedings of the 2011 14th European Conference…
- 2011

The new LV8900 900 V variable speed drive range from Converteam utilises 3-level NPC inverter topology, featuring multi-layer laminated busbars. These laminates contribute to the commutating stray inductances, and laminate resistive losses in high current and high switching frequency applications are affected by the skin effect. This paper describes models… (More)

- Tanya K. Gachovska, Jerry L. Hudgins, Enrico Santi, Angus T. Bryant, Patrick R. Palmer
- Modeling Bipolar Power Semiconductor Devices
- 2013

A procedure for automatic parameter extraction is outlined, based on accurate physics-based models of the diode, IGBT and associated circuitry. A formal optimisation method is used to refine initial parameter estimates, and is coupled with a hardware testing system to obtain device waveform measurements.

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