The real-time junction temperature monitoring of a high-power insulated-gate bipolar transistor (IGBT) module is important to increase the overall reliability of power converters for industrial… (More)
15th European Conference on Power Electronics and…
2013
A simple Vce online monitoring circuit is presented in this paper. It allows an accurate wear out prediction of IGBT modules, in high-power applications, during normal converter operation. Bipolar… (More)
International Power Electronics Conference (IPEC…
2014
An on-state collector-emitter voltage (Vce) measurement and thereby an estimation of average temperature in space for high power IGBT module is presented while power converter is in operation. The… (More)
International Power Electronics Conference (IPEC…
2014
Several accelerated test methods exist in order to study the failures mechanisms of the high power IGBT modules like temperature cycling test or power cycles based on DC current pulses. The main… (More)