Andrey Kosarev

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In this work we study the influence of hydrogen dilution on morphological properties and electronic of SiGe:H films. Surface morphology measured by Atomic Force Microscopy (AFM) technique and temperature dependence of conductivity, together with conductivity measurements in dark and under AM1.5 illumination at room temperature were used for(More)
In this work we study the atomic composition in SiGe:H films as a function of hydrogen dilution. Silane and germane fluxes are kept constant while hydrogen flow is varying to achieve dilutions up to 80 times. Solid content of principle elements as well as contaminants are determined by SIMS. For low dilutions (from 9 to 30), germanium solid content strongly(More)
This paper reports the study of Ge<inf>y</inf>Si<inf>1&#x2212;y</inf>:H films deposited at temperatures in the range of T<inf>d</inf>= 70 to 300 &#x00B0;C. The films were grown in capacitive low-frequency (f=110 KHz) discharge from Si:H<inf>4</inf> and Ge:H<inf>4</inf> feed gases diluted with H<inf>2</inf>. Other parameters were as follow: hydrogen flow(More)
Indium tin oxide (ITO) thin films were deposited by magnetron sputtering with different oxygen flows rates (%O<sub>2</sub> = 1 % to 0 %). The films were deposited by RF discharge in argon/oxygen atmosphere with a RF power W = 150 W at substrate temperature T = 175&#x00B0; C and pressure P = 6 mTorrs. Photoelectric parameters of fabricated ITO films were(More)
In this work we study the high contrast distributed Bragg reflectors (DBRs) based on plasma deposited Si:H/SiC:H films. Optical constants of these materials were measured by means of spectral ellipsometry and used in theoretical calculations of spectral transmittance and reflectance. The stacks consisted of 13 layers of the films were designed to provide(More)
Measurements of non-steady-state P-EMF current as a function temporal and spatial modulation frequencies were performed on intrinsic hydrogenated amorphous silicon film at 633 nm wavelength. The experimental behavior of photo-EMF current is well described by a bipolar photoconductivity model. Material photoelectric parameters such as majority carriers'(More)
We have studied the effect of Ge-concentration in gas phase on electronic properties of GeXSiY:H alloys deposited by RF-PECVD. The relative gas phase Ge concentration was varied from [Ge]<sub>gas</sub>= 50 % to 100 %. The electronic properties of the films were studied by the measurements of temperature dependence of dark conductivity(More)
Temperature dependence of DC conductivity &#x03C3;DC(T) of spin-coated poly (3,4 ethylenedioxythiophene): poly(4-styrenesulfonate) (PEDOT:PSS) films has been studied. &#x03C3;DC(T) was measured in films deposited from mixtures of PEDOT/PSS: H<sub>2</sub>O (1:0.5), PEDOT:PSS (without dilution), PEDOT/PSS: Isopropyl Alcohol (IPA) (1:0.5) and PEDOT/PSS:IPA(More)
Inorganic-organic hybrid solar cells with different frontal interface configurations have been studied. Spin-coated conducting polymer Poly (3,4 ethylenedioxythiophene): poly(4-styrenesulfonate) (PEDOT:PSS) or boron doped a-Si:H films were used as p-type layer. Intrinsic amorphous silicon (a-Si:H) films and P3HT:PCBM heterojunctions were investigated as(More)