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This paper reports the study of Ge<inf>y</inf>Si<inf>1&#x2212;y</inf>:H films deposited at temperatures in the range of T<inf>d</inf>= 70 to 300 &#x00B0;C. The films were grown in capacitive low-frequency (f=110 KHz) discharge from Si:H<inf>4</inf> and Ge:H<inf>4</inf> feed gases diluted with H<inf>2</inf>. Other parameters were as follow: hydrogen flow(More)
In this work we study the atomic composition in SiGe:H films as a function of hydrogen dilution. Silane and germane fluxes are kept constant while hydrogen flow is varying to achieve dilutions up to 80 times. Solid content of principle elements as well as contaminants are determined by SIMS. For low dilutions (from 9 to 30), germanium solid content strongly(More)
Temperature dependence of DC conductivity &#x03C3;DC(T) of spin-coated poly (3,4 ethylenedioxythiophene): poly(4-styrenesulfonate) (PEDOT:PSS) films has been studied. &#x03C3;DC(T) was measured in films deposited from mixtures of PEDOT/PSS: H<sub>2</sub>O (1:0.5), PEDOT:PSS (without dilution), PEDOT/PSS: Isopropyl Alcohol (IPA) (1:0.5) and PEDOT/PSS:IPA(More)
In this work we present a study of material substrates and fabrication process effect on morphological characteristics of Si:H films and related p-i-n structures. Measurements of spectral dependence of optical transmittance of plastic substrates in ultraviolet and visible range were performed. AFM measurements were conducted over area of 10 &#x00D7; 10(More)
In this work we study the influence of hydrogen dilution on morphological properties and electronic of SiGe:H films. Surface morphology measured by Atomic Force Microscopy (AFM) technique and temperature dependence of conductivity, together with conductivity measurements in dark and under AM1.5 illumination at room temperature were used for(More)
Indium tin oxide (ITO) thin films were deposited by magnetron sputtering with different oxygen flows rates (%O<sub>2</sub> = 1 % to 0 %). The films were deposited by RF discharge in argon/oxygen atmosphere with a RF power W = 150 W at substrate temperature T = 175&#x00B0; C and pressure P = 6 mTorrs. Photoelectric parameters of fabricated ITO films were(More)
In this work we study the influence of frontal interface modification with titanium and carbon layers between p<sup>+</sup>-layer and transparent conductive oxide (TCO). Indium titanium oxide (ITO) and zinc oxide doped by aluminum (AZO) are used as TCO. Impact on performance characteristics is determined by current voltage measurements in dark and under(More)
In this work we study the high contrast distributed Bragg reflectors (DBRs) based on plasma deposited Si:H/SiC:H films. Optical constants of these materials were measured by means of spectral ellipsometry and used in theoretical calculations of spectral transmittance and reflectance. The stacks consisted of 13 layers of the films were designed to provide(More)
In a previous work [1], the deposition conditions that provided low optical absorption related to both band tail and deep localized states have been found for both materials Ge: H and Si1-YGeY: H. In this work phosphorous and boron doping of Ge: H films have been systematically studied. These films were deposited by low frequency (LF) plasma under the(More)
Inorganic-organic hybrid solar cells with different frontal interface configurations have been studied. Spin-coated conducting polymer Poly (3,4 ethylenedioxythiophene): poly(4-styrenesulfonate) (PEDOT:PSS) or boron doped a-Si:H films were used as p-type layer. Intrinsic amorphous silicon (a-Si:H) films and P3HT:PCBM heterojunctions were investigated as(More)