Andrey Kosarev

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Measurements of non-steady-state P-EMF current as a function temporal and spatial modulation frequencies were performed on intrinsic hydrogenated amorphous silicon film at 633 nm wavelength. The experimental behavior of photo-EMF current is well described by a bipolar photoconductivity model. Material photoelectric parameters such as majority carriers'(More)
Carbon films deposited at relatively low temperatures were studied as a coating for polysilicon substrates to provide enhancement of the electron field emission. Undoped and phosphor doped polysilicon substrates were coated by carbon films grown by a very high frequency chemical vapor deposition process. Critical process parameters include substrate(More)
In this work we study the influence of frontal interface modification with titanium and carbon layers between p<sup>+</sup>-layer and transparent conductive oxide (TCO). Indium titanium oxide (ITO) and zinc oxide doped by aluminum (AZO) are used as TCO. Impact on performance characteristics is determined by current voltage measurements in dark and under(More)
Inorganic-organic hybrid solar cells with different frontal interface configurations have been studied. Spin-coated conducting polymer Poly (3,4 ethylenedioxythiophene): poly(4-styrenesulfonate) (PEDOT:PSS) or boron doped a-Si:H films were used as p-type layer. Intrinsic amorphous silicon (a-Si:H) films and P3HT:PCBM heterojunctions were investigated as(More)
The films studied were grown at the temperature T<inf>d</inf>= 160 &#x00B0;C and doped by boron (B) and phosphorus (P) by incorporation of diborane (B<inf>2</inf>H<inf>6</inf>) and phosphine (PH<inf>3</inf>), respectively, in gas mixture used for the deposition. For B-doped films changing boron concentration in gas phase C<inf>B</inf><sup>gas</sup> from(More)
Indium tin oxide (ITO) thin films were deposited by magnetron sputtering with different oxygen flows rates (%O<sub>2</sub> = 1 % to 0 %). The films were deposited by RF discharge in argon/oxygen atmosphere with a RF power W = 150 W at substrate temperature T = 175&#x00B0; C and pressure P = 6 mTorrs. Photoelectric parameters of fabricated ITO films were(More)
In this work we present a study of morphological characteristics evolution in the various layers comprising a Si:H p-i-n structure, which are deposited by PECVD on &#x201C;Corning&#x201D; glass substrates coated with transparent conductive Al-doped zinc oxide (AZO). AFM measurements were conducted over area of 2 &#x00D7; 2 &#x03BC;m<sup>2</sup> to determine(More)
Temperature dependence of DC conductivity &#x03C3;DC(T) of spin-coated poly (3,4 ethylenedioxythiophene): poly(4-styrenesulfonate) (PEDOT:PSS) films has been studied. &#x03C3;DC(T) was measured in films deposited from mixtures of PEDOT/PSS: H<sub>2</sub>O (1:0.5), PEDOT:PSS (without dilution), PEDOT/PSS: Isopropyl Alcohol (IPA) (1:0.5) and PEDOT/PSS:IPA(More)
This paper reports the study of Ge<inf>y</inf>Si<inf>1&#x2212;y</inf>:H films deposited at temperatures in the range of T<inf>d</inf>= 70 to 300 &#x00B0;C. The films were grown in capacitive low-frequency (f=110 KHz) discharge from Si:H<inf>4</inf> and Ge:H<inf>4</inf> feed gases diluted with H<inf>2</inf>. Other parameters were as follow: hydrogen flow(More)