Andrey G. Gladyshev

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This paper presents data on wafer-fused 1550-nm vertical-cavity surface-emitting lasers (VCSELs) based on the active region and distributed Bragg reflectors (DBRs) grown by molecular beam epitaxy. VCSELs with a tunnel junction aperture diameter of <inline-formula> <tex-math notation="LaTeX">$8~\mu \text{m}$ </tex-math></inline-formula> show lasing at a(More)
We report planar vertical cavity surface emitting lasers with record 15 mW of continuous wave single transverse mode output power that employ spatially displaced multiple aperture and deep oxidation layers in a bottom emitting geometry.
We present a semiconductor disk laser (SDL) emitting at the wavelength of 1.3 μm. The active region of the SDL comprises InAs quantum dots (QDs) that are embedded into InGaAs quantum wells (QWs). An output power over 200 mW is obtained at 15°C, which represents the highest output power reported from QD-based SDLs in this wavelength range. The results(More)
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