Andrei Mihaila

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In this paper, we present for the first time, the experimental results of a “Bimode Cross Switch (BXS)-Hybrid” built with 3.3kV Silicon Enhanced Trench Bi-mode IGBTs (Si-ET-BIGT) and Silicon Carbide MOSFETs (SiC-MOSFET). Also, we have compared the static (on-state) and dynamic (switching) characteristics of the 3.3kV BXS-Hybrid (1 ×(More)
This paper discusses an elaborated study about the design of Junction-Barrier Schottky (JBS) diodes regarding the width (w) and spacing (s) of the implanted p<sup>+</sup> pattern, utilizing epitaxial drift-layer specifications (4H-SiC) suitable for 1.7 kV applications. The impact of the w/s design-ratio on the blocking characteristics, the unipolar ON-state(More)
Several edge termination structures for high voltage 4H-SiC devices compatible with a planar MOSFET fabrication process are analyzed in this paper. The edge terminations’ efficiency has been analyzed on PiN diodes with breakdown voltage capabilities ranging from 2-5kV fabricated with full MOSFET process. Different edge terminations consisting in JTEs and(More)
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