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This paper reports a 71 GHz static and a 103 GHz regenerative dynamic frequency divider fabricated in 0.25 mum SiGe:C HBT technology with f<sub>T</sub>/f<sub>max</sub>200 GHz. The static divider including the buffer works with a 3.5 V single supply voltage and consumes 140 mW with 42 mW for the master-slave flip-flop (FF). The high speed/power ratio makes… (More)
A switchable double-sensor input single-output is designed, fabricated and characterized in OMMIC GaAs pHEMT technology. The realized differential amplifier shows a gain of 28 dB and a 3 dB bandwidth of above 5 GHz. Two different miniature sensors (loop and dipole) are integrated at the input of the designed amplifier. This double-sensor probe will be used… (More)
This paper presents a comparison of two low-noise mixers designed in Infineon's 0.13 µm CMOS and 0.35 µm SiGe:C processes. The mixers have been optimized for low-noise performance for narrow-band 24 GHz applications. Both circuits are based on the Gilbert cell and have similar topology. The chips are designed to fulfill high robustness… (More)
— This paper presents an ESD-protected 24 GHz single-stage differential cascode LNA in Infineon's B7HF200 SiGe technology. It is designed to fulfill high robustness requirements for industrial or automotive applications. Performance variation of key parameters has been analyzed in measurement over a wide range of temperatures from −25 • C to 125 • C. The… (More)
An inductorless single-ended input to differential output active balun is presented. The balun has a 12.4dB gain at 50GHz and a 3-dB bandwidth from 31 to 65GHz. Measured maximum amplitude and phase errors between the two outputs are 0.5 dB and 2.5°, respectively. Measured input and output reflection are below −15dB and −10dB… (More)
Using our 0.2 pm AlGaAs-GaAs-AlGaAs quantum well HEMT technology, we have designed a chip set for 20-40 Gbit/s transmission systems. In this paper we describe five chips for the receiver side. The presented results have been measured on wafer.
1.3 - 1.55μm wavelength 20 Gbit/s MSM-HEMT and 10 Gbit/s PIN-HEMT photoreceivers have been monolithically integrated on GaAs substrates using a 0.3 μm gate length AlGaAs/GaAs HEMT process. The In/sub 0.53/Ga/sub 0.47/As MSM and PIN photodiodes grown on GaAs have nearly identical characteristics to photodiodes grown on InP.