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- Sebastian Blaeser, Stefan Glass, +8 authors Siegfried Mantl
- 2015 IEEE International Electron Devices Meetingâ€¦
- 2015

This paper presents a novel SiGe/Si tunneling field-effect transistor (TFET) which exploits line tunneling parallel with the gate electric field. The device makes use of selective and self-adjustedâ€¦ (More)

- Matthias Schmidt, Renato Amaral Minamisawa, +6 authors Siegfried Mantl
- Ulis 2011 Ultimate Integration on Silicon
- 2011

Compressively strained Si<inf>1âˆ’x</inf>Ge<inf>x</inf> band-to-band tunneling field effect transistors with planar structure and HfO<inf>2</inf>/TiN gate stack have been produced and analyzed, withâ€¦ (More)

- Daniela Stange, Nils von den Driesch, +10 authors Dan M. Buca
- Optics express
- 2016

We present results on CVD growth and electro-optical characterization of Ge(0.92)Sn(0.08)/Ge p-i-n heterostructure diodes. The suitability of Ge as barriers for direct bandgap GeSn active layers inâ€¦ (More)

- Chang Liu, Stefan Glass, +8 authors Q. T. Zhao
- IEEE Electron Device Letters
- 2017

This letter presents an experimental capacitanceâ€“voltage <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math></inline-formula>â€“<inline-formula> <tex-math notation="LaTeX">${V}$â€¦ (More)

- Q. T. Zhao, Simon Richter, +9 authors Siegfried Mantl
- IEEE Journal of the Electron Devices Society
- 2015

Guided by the Wentzel-Kramers-Brillouin approximation for band-to-band tunneling (BTBT), various performance boosters for Si TFETs are presented and experimentally verified. Along this line,â€¦ (More)

- Stephan Wirths, Daniela Stange, +11 authors Dan M. Buca
- ACS applied materials & interfaces
- 2015

We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formationâ€¦ (More)

- Christian Schulte-Braucks, Nils von den Driesch, +8 authors Dan M. Buca
- ACS applied materials & interfaces
- 2016

(Si)GeSn is an emerging group IV alloy system offering new exciting properties, with great potential for low power electronics due to the fundamental direct band gap and prospects as high mobilityâ€¦ (More)

- Gia Vinh Luong, Keyvan Narimani, +4 authors Siegfried Mantl
- IEEE Electron Device Letters
- 2016

In this letter, we present complementary tunneling field-effect transistors (CTFETs) based on strained Si with gate all around nanowire structures on a single chip. The main focus is to suppress theâ€¦ (More)

- Stephan Wirths, Dan M. Buca, +6 authors Siegfried Mantl
- 2012 International Silicon-Germanium Technologyâ€¦
- 2012

This paper presented an epitaxial growth studies of pseudomorphic Si<sub>1-x</sub>Ge<sub>x</sub> and relaxed Ge layers on 200 mm Si(100) wafers using an AIXTRON TricentÂ® RPCVD tool.

- Chang Liu, Qinghua Han, +8 authors Q. T. Zhao
- IEEE Transactions on Electron Devices
- 2016

We present the experimental analysis of planar Si p-tunnel FETs (TFETs) fabricated on ultrathin body Silicon on Insulator (SOI) substrates by an optimized dopant implantation into silicide process.â€¦ (More)