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A framework is proposed that allows for a joint description and optimization of both binary polar coding and 2 m-ary digital pulse-amplitude modulation (PAM) schemes such as multilevel coding (MLC) and bit-interleaved coded modulation (BICM). The conceptual equivalence of polar coding and multilevel coding is covered in detail. Based on an alternative(More)
In this article, we study the coupled mode space approach to nonequilibrium Green's function ͑NEGF͒ simulation. When the lateral confinement of nanoscale devices changes abruptly and the correlation functions arising from coupled mode effects are improperly evaluated in the current and charge density calculations, it becomes difficult to solve(More)
Nanowire transistors with a perfect crystal structure and a well-defined Si– SiO 2 interface cannot be grown with the actual technology. The shape of the semiconducting channel varies from source to drain. By self-consistently coupling the three-dimensional Schrödinger and Poisson equations, interface roughness ͑IR͒ effects are studied in Si triple-gate(More)
A framework is proposed that allows for a joint description and optimization of both binary polar coding and the multilevel coding (MLC) approach for 2<sup>m</sup>-ary digital pulse-amplitude modulation (PAM). The conceptual equivalence of polar coding and multilevel coding is pointed out in detail. Based on a novel characterization of the channel(More)
—We consider the joint design of polar coding and higher-order modulation schemes for ever increased spectral efficiency. The close connection between the polar code construction and the multi-level coding approach is described in detail. Relations between different modulation schemes such as bit-interleaved coded modulation (BICM) and multi-level coding(More)
The Multi-Wavelet (MW) Discontinuous Galerkin method (DG) (MWDG) for high polynomial orders (POs) is proposed for the solution of 6-dimensional transport equations for the first time. In contrast to the popular Spherical Harmonics expansion method (SHE), the DG formulation is stable under the application of high order piecewise polynomials (pp) in energy(More)
Among the alloys of Group IV semiconductors the Germanium-Tin (GeSn) alloy is particularly interesting as it exhibits a small and direct band gap for a certain range of Sn content. This feature can be exploited for high-performance tunnel FET (TFET) application. The small direct band gap enhances the band-to-band-tunneling (BTBT) rate which results in a(More)
As the active dimensions of metal-oxide field-effect transistors are approaching the atomic scale, the electronic properties of these " nanowire " devices must be treated on a quantum mechanical level. In this paper, the transmission coefficients and the density of states of biased and unbiased Si and GaAs nanowires are simulated using the sp 3 d 5 s *(More)