Andreas Nägelein

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Though III-V/Si(100) heterointerfaces are essential for future epitaxial high-performance devices, their atomic structure is an open historical question. Benchmarking of transient optical in situ spectroscopy during chemical vapor deposition to chemical analysis by X-ray photoelectron spectroscopy enables us to distinguish between formation of surfaces and(More)
The detection of doping dependent values like contact- and path resistances along nanowires (NWs) still proves to be rather challenging compared to planar structures. Unfortunately, the usually used and well established TLM (transmission line measurement) setup exhibits some drawbacks. Complex preliminary preparation steps and the necessity of ohmic(More)
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