Andreas Leven

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The combination of device speed (f/sub T/, f/sub max/>150 GHz) and breakdown voltage (V/sup bcco/ of about 10 V), makes the double heterojunction InP-based HBT (D-HBT), a very attractive technology to implement the most demanding analog functions of 40 Gb/s transceivers. This is illustrated by the performance of a number of InP D-HBT circuits including(More)
We report a novel hybrid integrated optic device consisting of AlGaInAs/InP electroabsorption modulators and a four-arm silica-on-silicon planar lightwave circuit optical interferometer. The device is designed for generation of high spectral efficiency optical modulation formats. We demonstrate generation of 21.4 Gb/s quadrature phase shift keyed optical(More)
Low-density parity-check (LDPC) codes based on structured parity check matrices are widely used due to their favorable implementation properties. Often, however, the convergence threshold is optimized based on the general LDPC code ensemble (i.e., the degree profile only) without taking into account the imposed structure, leading to a mismatch of(More)
1.3 - 1.55μm wavelength 20 Gbit/s MSM-HEMT and 10 Gbit/s PIN-HEMT photoreceivers have been monolithically integrated on GaAs substrates using a 0.3 μm gate length AlGaAs/GaAs HEMT process. The In/sub 0.53/Ga/sub 0.47/As MSM and PIN photodiodes grown on GaAs have nearly identical characteristics to photodiodes grown on InP.
A 12 GS/s track-and-hold amplifier (THA) for a DSP-based electrical polarization-mode dispersion compensator (e-PMDC) in a 10 GHz optical receiver, featuring a total harmonic distortion (THD) compatible with 6 bit operation on 1 V/sub p-p/ differential input range at -5.2 V supply, has been designed and fabricated in InP/InGaAs/InP double-heterojunction(More)