Andrea Sauer

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The heavy ion trap facility (HITRAP), which is shown in fig.1 and is being built in the re-injection channel between ESR and SIS will provide unique beams of highly charged ions up to bare uranium at very low energies for a large variety of experiments. At the HITRAP facility the ions, produced by the GSI accelerator facility, will be decelerated in two(More)
This paper presents the impact of voltage fall time of SiC MOSFETs, applied in converters of aerospace DC fed AC drives, on a HF conducted EMI signals. Simple frequency domain behavioral model is proposed for the use. Simulation results and real system measurements are successfully compared. It was shown that appropriate tuning of MOSFET voltage fall time(More)
The heavy ion trap facility (HITRAP) (fig.1) will provide unique beams of highly charged ions up to bare U at very low energies for a large variety of experiments. HITRAP will decelerate ions (e.g. U 91+) produced by the GSI accelerator facility at relativistic energies. The ions are first decelerated the ESR down to 4 MeV/u and further decelerated down to(More)
The heavy ion trap (HITRAP) linac will decelerate highly charged ions up to U 92+ , provided by the GSI accelerator facility at 4 MeV/u down to 6 keV/u. The highly charged ions will subsequently be injected into a Penning trap for beam cooling. Therefore the HITRAP facility will provide unique pulsed beams of up to about 10 5 highly charged ions at very low(More)
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