André Scavennec

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We report on the development of a multi-finger InP/GaAsSb DHBT technology, optimized for the fabrication of RF MMICs. Geometry (number of fingers) and structure optimization has allowed to get FT~200 GHz and FMAX>300 GHz, to suit microwave applications. Special attention has been paid to critical thermal behavior. Key devices have been modeled using a(More)
The capacity of fiber-optic telecommunication systems can be increased by higher data rate signaling. We present key analog and digital circuits which find application as building blocks in future very high data rate systems. The circuits are fabricated in our indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. The physical(More)
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