André F. Ponchet

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A set of low noise transimpedance amplifiers fabricated and characterized in CMOS and BiCMOS technologies are proposed in this work. Layout optimization, efficient modeling and bias point optimization are the techniques employed to reduce the input noise current density. The CMOS amplifiers were designed to work at 10 Gbps. The BiCMOS amplifiers, based on(More)
Design guide lines are given for developing SiGe HBT mm-wave d.c. coupled ultra-wide-band low noise monolithic amplifiers. An ultra wide band LNA and two mm-wave TIAs for 40 Gbps and 100 Gbps applications are proposed. The LNA has S21=11 dB and a 3-dB bandwidth of 88 GHz. The 40 Gbps TIA has a new topology, allowing a DC coupled performance, 54 dBΩ(More)
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