Ananth Dodabalapur

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investigated for a number of low-cost, large-area applications, particularly those that are compatible with flexible plastic circuits 1-12. The organic materials that have been used as active semiconductor materials include both sublimed and solution-materials opens up several possibilities to develop integrated circuit technologies based on organic(More)
Organic field-effect transistors have been developed that function as either n-channel or p-channel devices, depending on the gate bias. The two active materials are alpha-hexathienylene (alpha-6T) and C(60). The characteristics of these devices depend mainly on the molecular orbital energy levels and transport properties of alpha-6T and C(60). The observed(More)
The thiophene oligomer alpha-hexathienylene (alpha-6T) has been successfully used as the active semiconducting material in thin-film transistors. Field-induced conductivity in thin-film transistors with alpha-6T active layers occurs only near the interfacial plane, whereas the residual conductivity caused by unintentional doping scales with the thickness of(More)
The electrical and optical properties of conjugated polymers have received considerable attention in the context of potentially low-cost replacements for conventional metals and inorganic semiconductors. Charge transport in these organic materials has been characterized in both the doped-metallic and the semiconducting state, but superconductivity has not(More)
riers in the 6T wire. [3] Holes are trapped by defects in the crystal, which reduces the number of mobile carriers and hinders the movement of untrapped positive-charge carriers. Charge trapping can be reversed, however, by applying a positive-gate voltage (backbiasing) to force trapped holes out of trap states via electrostatic repulsion. As seen from the(More)
We report here on the structure and operating characteristics of an ambipolar light-emitting field-effect transistor based on single crystals of the organic semiconductor alpha-sexithiophene. Electrons and holes are injected from the source and drain electrodes, respectively. Their concentrations are controlled by the applied gate and drain-source voltages.(More)
A method is described for increasing luminescence in poly(p-phenylene vinylene) (PPV) light-emitting diodes. Cis linkages were engineered into the PPV chain. These linkages interrupt conjugation and interfere with the packing of the polymer chains, which results in the formation of amorphous PPV. Large-area electroluminescent devices were prepared from this(More)
The electrical properties of polymeric thin film transisitors (P-TFTs) based on poly(9,9-dioctylfluorene-co-bithiophene) alternating copolymer (F8T2) have been studied. Device performance was compared for amorphous silicon nitride deposited by LPCVD and PECVD techniques, aluminum oxide deposited by sputtering, titanium oxide deposited by sputtering, and(More)