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investigated for a number of low-cost, large-area applications, particularly those that are compatible with flexible plastic circuits 1-12. The organic materials that have been used as active semiconductor materials include both sublimed and solution-materials opens up several possibilities to develop integrated circuit technologies based on organic(More)
Electronic systems that use rugged lightweight plastics potentially offer attractive characteristics (low-cost processing, mechanical flexibility, large area coverage, etc.) that are not easily achieved with established silicon technologies. This paper summarizes work that demonstrates many of these characteristics in a realistic system: organic active(More)
Organic field-effect transistors have been developed that function as either n-channel or p-channel devices, depending on the gate bias. The two active materials are alpha-hexathienylene (alpha-6T) and C(60). The characteristics of these devices depend mainly on the molecular orbital energy levels and transport properties of alpha-6T and C(60). The observed(More)
Few-layer black phosphorus (BP), also known as phosphorene, is poised to be the most attractive graphene analogue owing to its high mobility approaching that of graphene, and its thickness-tunable band gap that can be as large as that of molybdenum disulfide. In essence, phosphorene represents the much sought after high-mobility, large direct band gap(More)
The thiophene oligomer alpha-hexathienylene (alpha-6T) has been successfully used as the active semiconducting material in thin-film transistors. Field-induced conductivity in thin-film transistors with alpha-6T active layers occurs only near the interfacial plane, whereas the residual conductivity caused by unintentional doping scales with the thickness of(More)
Chalcopyrite copper indium sulfide (CuInS2) and copper indium gallium selenide (Cu(InxGa(1-x))-Se2; CIGS) nanocrystals ranging from approximately 5 to approximately 25 nm in diameter were synthesized by arrested precipitation in solution. The In/Ga ratio in the CIGS nanocrystals could be controlled by varying the In/Ga reactant ratio in the reaction, and(More)
riers in the 6T wire. [3] Holes are trapped by defects in the crystal, which reduces the number of mobile carriers and hinders the movement of untrapped positive-charge carriers. Charge trapping can be reversed, however, by applying a positive-gate voltage (backbiasing) to force trapped holes out of trap states via electrostatic repulsion. As seen from the(More)
Organic semiconductor films are susceptible to noncovalent interactions, trapping and doping, photoexcitation, and dimensional deformation. While these effects can be detrimental to the performance of conventional circuits, they can be harnessed, especially in field-effect architectures, to detect chemical and physical stimuli. This Review summarizes recent(More)