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Hexagonal pore arrays with a 50-420 nm interpore distance formed by self-organization in anodic alumina
Self-organized hexagonal pore arrays with a 50–420 nm interpore distance in anodic alumina have been obtained by anodizing aluminum in oxalic, sulfuric, and phosphoric acid solutions. Hexagonally
Exceptional ballistic transport in epitaxial graphene nanoribbons
It is shown that 40-nanometre-wide graphene nanoribbons epitaxially grown on silicon carbide are single-channel room-temperature ballistic conductors on a length scale greater than ten micrometres, which is similar to the performance of metallic carbon nanotubes.
Dopant segregation and giant magnetoresistance in manganese-doped germanium
Dopant segregation in a ${\mathrm{Mn}}_{\mathrm{x}}{\mathrm{Ge}}_{1\ensuremath{-}x}$ dilute magnetic semiconductor leads to a remarkable self-assembly of Mn-rich nanocolumns, embedded in a fully
Magnetism in Mn x Ge 1-x semiconductors mediated by impurity band carriers
We present a comprehensive study of ferromagnetism and magnetotransport in Mn-doped germanium, grown with molecular-beam epitaxy. Ferromagnetism in ${\mathrm{Mn}}_{x}{\mathrm{Ge}}_{1\ensuremath{-}x}$
Large discrete resistance jump at grain boundary in copper nanowire.
This is the first ever attempt to measure and calculate individual GB resistances in copper nanowires with a one-to-one correspondence to the GB structure.
Epitaxial ferromagnetic Mn5Ge3 on Ge(111)
Ferromagnetic Mn5Ge3 thin films were grown on Ge(111) with solid-phase epitaxy. The epitaxial relationship between the alloy film and substrate is Mn5Ge3(001)//Ge(111) with [100]Mn5Ge3//[110]Ge. The
Charge-order fluctuations in one-dimensional silicides.
This work fabricated exceptionally long and uniform YSi(2) nanowires through self-assembly of yttrium atoms on Si(001) through detailed comparison of scanning tunnelling microscopy data and first-principles calculations, illustrating how a collective phenomenon such as charge ordering might be exploited in nanoelectronic devices.
Spatially resolved mapping of electrical conductivity across individual domain (grain) boundaries in graphene.
Here, spatially map electronic transport near specific domain and grain boundaries in both epitaxial graphene grown on SiC and CVD graphene on Cu subsequently transferred to a SiO2 substrate, with one-to-one correspondence to boundary structures.