Amos Salvador

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Summary form only given. Indium arsenide quantum dots were grown in the Stranski-Krastanov mode using MBE and a GaAs [100] undoped substrate. Samples were grown to investigate the influence of vertical alignment on stacked quantum dots. Photoluminescence experiments at room temperature were performed on the samples.
The magnetic field orientation dependence of the terahertz radiation intensity from GaAs/AlGaAs modulation-doped structures with varying spacer thickness was investigated. Results are analyzed in the context of junction electric field, carrier mobility, and interface roughness.
It has been known that the surface-field THz emission in a semiconductor and in a semiconductor quantum well occurs when a short laser pulse creates electron-hole (e-h) dipoles that are accelerated in opposite directions by the surface electric field. The accelerating charges emit a THz transient signal [1]. Other mechanisms include intersubband spontaneous(More)
We present terahertz emission of optically pumped GaAs/AlGaAs multiple quantum wells (MQWs). The action spectra exhibit emission even at excitation energies below the bandgap. Results show that the radiation could not have come from the bulk layers and is inferred to be due to shallow states under the band edge.
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