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—MIMO channel capacity may be severely degraded due to correlation between individual sub-channels of the matrix channel. Several models, which are limited to some specific scenarios , have been developed to date to account for this effect. In this letter, we derive a new upper bound on the mean (ergodic) MIMO capacity, which is not limited to a particular(More)
—It has recently been demonstrated that zero correlation of a random multiple-input multiple-output channel is not a guarantee of its high capacity. Degenerate channels exist, which have zero correlation and still low capacity. In this letter, we provide a statistical analysis of this phenomenon, formulate the general condition for a channel to be(More)
A universal upper bound on the MIMO architecture capacity, which is not limited to a particular scenario, is derived in this paper using the correlation matrix approach and the Jensen's inequality. This bound accounts for both transmit and receive branch correlation in such a way that the impact of these branches can be estimated separately, which(More)
Implantable medical devices have been implemented to provide treatment and to assess in vivo physiological information in humans as well as animal models for medical diagnosis and prognosis, therapeutic applications and biological science studies. The advances of micro/nanotechnology dovetailed with novel biomaterials have further enhanced biocompatibility,(More)
Numerous engineering fields are nowadays dealing with complex systems. The analysis, design, testing and maintenance of such systems are crucial challenges. For this purpose, the OMG proposed SysML, an extension of UML, in order to address the issues of modeling complex systems in different engineering domains. This standard enables the elaboration of(More)
This paper presents the design of a reconfigurable RF amplifier based on compact tunable MEMS impedance matching network for low frequency applications. The amplifier uses a pHEMT transistor fabricated in GaAs technology while the MEMS circuits were fabricated using a dedicated RF MEMS process. The reconfigurable network is based on a slow-wave distributed(More)
In this paper, a reliable small-signal model parameter extraction method for GaN high electron mobility transistor (HEMT) on Si substrate has been developed and validated with respect to different gate width devices. The main advantage of this approach is its accuracy and dependency on only pinched-off and unbiased S-parameter measurements. The developed(More)