Amit Sangai

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This paper presents the <i>first</i> parameterized, SPICE-compatible compact model of a Graphene Nano-Ribbon Field-Effect Transistor (GNRFET) with doped reservoirs that also supports process variation. The current and charge models closely match numerical TCAD simulations. In addition, process variation in transistor dimension, edge roughness, and doping(More)
—In this paper, we present a highly accurate closed-form compact model for Schottky-Barrier-type Graphene Nano-Ribbon Field-Effect Transistors (SB-GNRFETs). This is a physics-based analytical model for the current–voltage (I–V) characteristics of SB-GNRFETs. We carry out accurate approximations of Schottky barrier tunneling, channel charge and current,(More)
This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication. Abstract—This paper presents the first parameterized, SPICE-compatible compact model of a Graphene Nano-Ribbon Field-Effect Transistor (GNRFET) with doped reservoirs, also known as MOS-type GNRFET.(More)
The graphene nano-ribbon field effect transistor (GNRFET) is an emerging technology that received much attention in recent years. Recent work on GNRFET circuit simulations has shown that GNRFETs may have potential in low power applications. In this paper, we review the existing work on GNRFET circuit modeling, compare the two varieties of GNRFETs,(More)
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