Amirsaman Memaripour

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Next-generation non-volatile memories (NVMs) promise DRAM-like performance, persistence, and high density. They can attach directly to processors to form non-volatile main memory (NVMM) and offer the opportunity to build very low-latency storage systems. These high-performance storage systems would be especially useful in large-scale data center(More)
Data structures for non-volatile memories have to be designed such that they can be atomically modified using transactions. Existing atomicity methods require data to be copied in the critical path which significantly increases the latency of transactions. These overheads are further amplified for transactions on byte-addressable persistent memories where(More)
Emerging non-volatile memories (NVMs) like batterybacked DRAM and phase-change memory offer durability at higher speeds than traditional storage. Each technology represents a different point in the cost, performance and endurance space. In this paper, we propose that storage intensive applications use more than one kind of NVM in configurable proportions to(More)
Emerging fast, persistent memories will enable systems that combine conventional DRAM with large amounts of non-volatile main memory (NVMM) and provide huge increases in storage performance. Fully realizing this potential requires fundamental changes in how system software manages, protects, and provides access to data that resides in NVMM. We address these(More)
The program chairs, Jason Flinn (University of Michigan) and Hank Levy (University of Washington), told the crowd that they had moved to shorter presentations, just 22 minutes, so they could fit four presentations into each session. By doing this, they raised the acceptance rate from the old range of 12–14% to 18%. There were 242 submissions, with 42 papers(More)
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