Amir M. Dabiran

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This article reports forward and reverse biased emission in vertical ZnO nanowire/p-GaN heterojunction light emitting diodes (LEDs) grown out of solution on Mg-doped p-GaN films. The electroluminescence spectra under forward and reverse bias are distinctly different. Forward bias showed two peaks centered around 390 nm and 585 nm, while reverse bias showed(More)
  • Shao-Tsu Hung, Chi-Jung Chang, Chien-Hsing Hsu, Hwan Chu, Chien Fong Lo, Chin-Ching Hsu +9 others
  • 2012
High electron mobility transistors (HEMT) Tin oxide (SnO 2) Annealing a b s t r a c t In this study, we report on a demonstration of hydrogen sensing at low temperature using SnO 2 functionalized AlGaN/GaN high electron mobility transistors (HEMT). The SnO 2 dispersion was synthesized via a hydrothermal method and selectively deposited on the gate region of(More)
We present the measurements of thermal emittance and response time for a GaN photocathode illuminated with 5 ps pulses at 260 nm wavelength. The thermal emittance was measured downstream of a 100 kV dc gun using a solenoid scan with a wire scanner and a beam viewscreen and was found to be 1.35Ϯ 0.11 mm mrad normalized rms emittance per 1 mm rms of(More)
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