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We investigate the effect of stacking order of bilayer black phosphorene on the device properties of p-MOSFET and n-MOSFET. Two layers of black phosphorus are stacked in three different orders and… (More)
We investigate the effect of tensile and compressive strain in Phosphorene FET. Different percentage of tensile and compressive strain are applied on monolayer Phosphorene along the zigzag edge and… (More)
In this work, we investigate the contact and channel material dependency of the transport properties of Siticene and Armchair CNT based heterostructure devices. The Density of States (DOS) of the… (More)
Magnetic tunnel junctions (MTJ) have emerged as a possible alternative to charge based data storage cells. With the development in 2-dimensional materials, non-conventional insulators like 2D… (More)