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Journals and Conferences
In this letter, a simple edge termination is described which can be used to achieve nearly ideal parallel-plane breakdown voltage for GaN devices. This technique involves implanting a neutral species… (More)
In this letter, the results obtained with a finite termination by argon ion implantation at the periphery of GaN Schottky barrier diodes are reported. It is demonstrated that the implant region width… (More)
This paper details the use of nickel Schottky barriers as the source and drain for a Schottky barrier GaN MOSFET (SB-MOSFET).