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This paper reviews recent progress in the development of GaAs metamorphic HEMT (MHEMT) technology for microwave applications. Commercialization has begun, while efforts to further improve performance, manufacturability and reliability continue. We also report the first multi-watt MHEMT MMIC power amplifiers, demonstrating up to 3.2W output power and record(More)
We report on all-epitaxial growth of large diameter (3-inch), large aperture (&#x226B;1.5mm thick), low-loss (&#x226A;0.005cm<sup>&#x2212;1</sup>) QPM GaAs. 2-&#x00B5;m-laser-pumped OPO performance was comparable to that of ZnGeP<inf>2</inf>.
Substantial increases in substrate temperature, super-saturation, and V/III ratio have dramatically improved vertical domain propagation during hydride vapour phase epitaxy of orientation-patterned gallium phosphide, leading to device-quality quasi-phasematched layer thicknesses exceeding 400 microns.
Permeable base transistors have recently been fabricated using organometallic chemical vapor deposition (OMCVD) with a gain of 18.5 dB at 18 GHz. This extrapolates to an<tex>f_{\max}</tex>of 150 GHz which is comparable to the best previous result. Secondary ion mass spectrometry (SIMS) analysis shows that there is a large concentration of undesired(More)
We have developed 0.1-&#x03BC;m gate-length InAlN/GaN high electron-mobility transistors (HEMTs) for millimeterwave (MMW) power applications, particularly at 71-76 and 81-86 GHz bands. The impacts of depth and width of the gate recess groove on electrical performance have been analyzed and compared. Competing passivation technologies, atomic layer(More)
Here we report on recent advances in the development of orientation-patterned gallium phosphide (OP-GaP) - a low loss, non-critically phase-matched, 1-&#x03BC;m-pumpable binary analog of ZGP with three times the thermal conductivity for high power applications.
Whereas gate-length reduction has served as the major driving force to enhance the performance of GaAs- and InP-based high-electron mobility transistors (HEMTs) over the past three decades, the limitation of this approach begins to emerge. In this paper, we present a systematic evaluation of the impact of greatly reduced source-drain spacing on the(More)
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