Ali Razavieh

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The effect of diameter variation on electrical characteristics of long-channel InAs nanowire metal-oxide-semiconductor field-effect transistors is experimentally investigated. For a range of nanowire diameters, in which significant band gap changes are observed due to size quantization, the Schottky barrier heights between source/drain metal contacts and(More)
Nanostructures have attracted a great deal of attention because of their potential usefulness for high density applications. More importantly, they offer excellent avenues for improved scaling beyond conventional approaches. Less attention has been paid to their intrinsic potential for distinct circuit applications. Here we discuss how a combination of 1-D(More)
Neurotransmitter release in chemical synapses is fundamental to diverse brain functions such as motor action, learning, cognition, emotion, perception, and consciousness. Moreover, improper functioning or abnormal release of neurotransmitter is associated with numerous neurological disorders such as epilepsy, sclerosis, schizophrenia, Alzheimer's disease,(More)
Our experiments show that linearity can be achieved if transistors are designed to operate in the one-dimensional ballistic transport regime in the quantum capacitance limit. We report third order intercept points (IIP3) of around −13dBm at maximum transconductance under these particular transport and device operation conditions, meeting the(More)
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