Alexey Y. Kovalgin

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A means of accurate control of the curvature radius of molds that are used in nanostructure replication techniques is presented. The local non-uniform growth of SiO2 at regions with high curvature is used to fabricate molds with a curvature radius ranging anywhere between 10 and 250 nm. The mold radius is predicted by numerical simulation as a function of(More)
In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. In particular, the influence of deuterium incorporation on the bulk oxide quality is not clear. In this letter, deuterium or hydrogen is introduced during either the gate oxidation, postoxidation anneal, and/or the postmetal(More)
As silicene is not chemically inert, the study and exploitation of its electronic properties outside of ultrahigh vacuum environments require the use of insulating capping layers. In order to understand if aluminum oxide might be a suitable encapsulation material, we used high-resolution synchrotron photoelectron spectroscopy to study the interactions of Al(More)
Despite its high chemical stability, sputtered stoichiometric TiN can still be oxidized at temperatures below 400 oC, whereas a non-stoichiometric TiN is known to oxidize even at room temperature. In this work, the oxidation behaviour of thin TiN layers, realized via atomic layer deposition (ALD), is investigated. Our experiments on thermal oxidation of ALD(More)
This work employs the idea of maintaining a hot surface by means of dissipating power at a nano-scale conductive link. The link is created between two polysilicon electrodes separated by a dielectric (a capacitor-like structure). From modelling, a link of 10 nm in diameter should be possible to maintain the surface temperature ranging between 750 and 1150 K(More)
In this work, we realize light emitting functional multilayer (Al2O3 / Si-nanocrystals (Si-NC)) stacks at low temperatures (300-325 °C) by a combination of ALD and CVD techniques. The multilayer structure was obtained by a sequential deposition of a 20 nm-thick ALD Al2O3 film, followed by LPCVD of a Si-NC layer, without vacuum break. A high nanocrystal(More)
In order to measure silicide-to-silicon specific contact resistance ρc , transmission line model (TLM) structures were proposed as attractive candidates for embedding in CMOS processes. We optimized TLM structures for nickel silicide and platinum silicide and evaluated them for various doping levels of nand p-type Si. The measurement limitations and(More)
We measured electron density and electron energy distribution function (EEDF) in our reactor by a Langmuir probe. The EEDF of Ar plasma in the reactor could largely be described by the Maxwell-Boltzmann distribution function, but it also contained a fraction (~10) of electrons which were much faster (20-40 eV). The peak of the fast-electron tail shifted(More)
In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. It appears as if this controversy finds its origin in the different stages (e.g. oxidation or post metal anneal) deuterium is introduced in the CMOS process. This paper investigates this in detail. The obtained results show(More)
Two types of solar cells are successfully grown on chips from two CMOS generations. The efficiency of amorphous-silicon (a-Si) solar cells reaches 5.2%, copperindium-gallium-selenide (CIGS) cells 7.1%. CMOS functionality is unaffected. The main integration issues: adhesion, surface topography, metal ion contamination, process temperature, and mechanical(More)