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In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. In particular, the influence of deuterium incorporation on the bulk oxide quality is not clear. In this letter, deuterium or hydrogen is introduced during either the gate oxidation, postoxidation anneal, and/or the postmetal(More)
Two types of solar cells are successfully grown on chips from two CMOS generations. The efficiency of amorphous-silicon (a-Si) solar cells reaches 5.2%, copper-indium-gallium-selenide (CIGS) cells 7.1%. CMOS functionality is unaffected. The main integration issues: adhesion, surface topography, metal ion contamination, process temperature, and mechanical(More)
In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. It appears as if this controversy finds its origin in the different stages (e.g. oxidation or post metal anneal) deuterium is introduced in the CMOS process. This paper investigates this in detail. The obtained results show(More)
—In order to measure silicide-to-silicon specific contact resistance ρ c , transmission line model (TLM) structures were proposed as attractive candidates for embedding in CMOS processes. We optimized TLM structures for nickel silicide and platinum silicide and evaluated them for various doping levels of n-and p-type Si. The measurement limitations and(More)
—This paper presents a novel approach to make high-performance CMOS at low temperatures. Fully functional devices are manufactured using back-end compatible substrate temperatures after the deposition of the amorphous-silicon starting material. The amorphous silicon is pretextured to control the location of grain boundaries. Green-laser annealing is(More)
This work employs the idea of maintaining a hot surface by means of dissipating power at a nano-scale conductive link. The link is created between two polysilicon electrodes separated by a dielectric (a capacitor-like structure). From modelling, a link of 10 nm in diameter should be possible to maintain the surface temperature ranging between 750 and 1150 K(More)
The ubiquitous deploying of wireless electronic devices due to pervasive computing results in the idea of Energy Scavenging, i.e., harvesting ambient energy from surroundings of the electronic devices. As an approach to possible practical realization of such an energy scavenger, we aim at the fabrication of an electromagnetic (EM) generator. The generator(More)
—We designed a CMOS compatible hot-surface silicon device operating at a power down to sub-µW. It has a pillar-shaped structure with a nano-size (10-100 nm) conductive link between the electrodes separated by a SiO 2 layer. The device is capable of maintaining a µm-size hot-surface area of several hundred degrees centigrade due to non-radiative(More)