Alexander Grill

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Diamond-like carbon (DE) films are characterized by very low friction coefficients, high wear resistance and high corrosion resistance. Depending upon the testing environment, the coefficient of friction can be as low as 0.01. As-deposited films are wear resistant in vacuum as well as in atmospheric ambient. However, the tribological properties of DLC are(More)
Charge trapping in the insulating layer of gallium-nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) is a serious reliability challenge but is still poorly understood. We demonstrate here that the observed Vth drift and recovery can be understood as charge capture and emission following a non-radiative multi-phonon(More)
SiGe quantum-well pMOSFETs have recently been introduced for enhanced performance of transistors. Quite surprisingly, a significant reduction in negative bias temperature instability (NBTI) was also found in these devices. Furthermore, a stronger oxide field acceleration of the degradation in SiGe devices compared with Si devices was reported. These(More)
In this paper, a comprehensive investigation of quantum transport in nanoscaled gallium nitride (GaN) high electron mobility transistors (HEMTs) is presented. A simulation model for quantum transport in nanodevices on unstructured grids in arbitrary dimension and for arbitrary crystal directions has been developed. The model has been implemented as part of(More)
The susceptibility of conventional silicon p-channel MOS transistors to negative bias temperature instabilities (NBTIs) is a serious threat to further device scaling. One possible solution to this problem is the use of a SiGe quantum-well channel. The introduction of a SiGe layer, which is separated from the insulator by a thin Si cap layer, not only(More)
A significant increase of the drain current appears if defined arrangements of dislocations are present in the channel of MOSFETs. Furthermore, analyses of the electronic properties of individual defects refer to a supermetallic behavior of dislocations. The reason is the extremely high strain in the dislocation core exceeding values of effi 0.1. Such high(More)
Charge trapping in gallium-nitride (GaN) metalinsulator-semiconductor high-electron-mobility transistors (MISHEMTs) is a serious reliability challenge but is still poorly understood. A promising opportunity to investigate physical defect properties has become available through nanoscale GaN fin-MISHEMTs which are small enough to be sensitive to the impact(More)
Instabilities in MOS-based devices with various substrates ranging from Si, SiGe, IIIV to 2D channel materials, can be explained by defect levels in the dielectrics and nonradiative multi-phonon (NMP) barriers. However, recent results obtained on single defects have demonstrated that they can show a highly complex behaviour since they can transform between(More)
I report results of an examination of the final states in a muon protonscattering experiment performed with the SLAC two-meter streamer chamber. The experiment was performed using a beam of 14 GeV/c positive muons incident on a 40 cm liquid hydrogen target inside a 2 meter streamer chamber 'accepting almost the entire 47rfinal state solid angle.' (See Fig.(More)
Even though transistors are rarely subjected to idealized bias temperature instability or hot carrier stress conditions in circuits, there is only a limited number of studies available on mixed bias temperature instability and hot carrier stress. Here we summarize the results of the first study of mixed negative bias temperature instability and hot carrier(More)